2013

State selective photo-recombination cross sections in Be-like C and Al ions

Autori: 
Stancalie, V
Anul: 
2013
DOI: 
http://dx.doi.org/10.1140/epjd/e2013-40326-8

Development of tungsten and tungsten alloys for DEMO divertor applications via MIM technology

Autori: 
Blagoeva, DT; Opschoor, J; van der Laan, JG; Sarbu, C; Pintsuk, G; Jong, M; Bakker, T; Ten Pierick, P; Nolles, H
Anul: 
2013
DOI: 
http://dx.doi.org/10.1016/j.jnucmat.2013.01.004

Formation and delamination of beryllium carbide films

Autori: 
Mateus, R; Carvalho, PA; Franco, N; Alves, LC; Fonseca, M; Porosnicu, C; Lungu, CP; Alves, E
Anul: 
2013
DOI: 
http://dx.doi.org/10.1016/j.jnucmat.2013.04.009

Laser beam evaluation methods to study changes in 12 MeV energetic protons irradiated glasses

Autori: 
Ioan, MR; Gruia, I; Ioan, GV; Rusen, L; Ioan, P; Zorila, A
Anul: 
2013

Transparent thin film transistors using optimized oxide active layers and gate insulator

Autori: 
Gherendi, F
Anul: 
2013

Preparation method and thermal properties of samarium and europium-doped alumino-phosphate glasses

Autori: 
Sava, BA; Elisa, M; Boroica, L; Monteiro, RCC
Anul: 
2013
DOI: 
http://dx.doi.org/10.1016/j.mseb.2013.09.001

Comparative study on the degradation of UV optical fibers subjected to electron beam and gamma ray irradiation

Autori: 
Sporea, D; Sporea, A; Oproiu, C
Anul: 
2013
DOI: 
http://dx.doi.org/10.1016/j.yofte.2013.10.005

Multi-layer haemocompatible diamond-like carbon coatings obtained by combined radio frequency plasma enhanced chemical vapor deposition and magnetron sputtering

Autori: 
Popa, AC; Stan, GE; Husanu, MA; Pasuk, I; Popescu, ID; Popescu, AC; Mihailescu, IN
Anul: 
2013
DOI: 
http://dx.doi.org/10.1007/s10856-013-5026-y

Influence of a hydrophobin underlayer on the structuring and antimicrobial properties of ZnO films

Autori: 
Popescu, AC; Stan, GE; Duta, L; Dorcioman, G; Iordache, O; Dumitrescu, I; Pasuk, I; Mihailescu, IN
Anul: 
2013
DOI: 
http://dx.doi.org/10.1007/s10853-013-7646-5

K-S(0) and Lambda Production in Pb-Pb Collisions at root s(NN)=2: 76 TeV

Autori: 
Abelev, B; Adam, J; Adamova, D; Adare, AM; Aggarwal, MM; Rinella, GA; Agnello, M; Agocs, AG; Agostinelli, A; Ahammed, Z; Ahmad, N; Masoodi, AA; Ahmed, I; Ahn, SU; Ahn, SA; Aimo, I; Aiola, S; Ajaz, M; Akindinov, A; Aleksandrov, D; Alessandro, B; Alexandre, D; Alici, A; Alkin, A; Alme, J; Alt, T; Altini, V; Altinpinar, S; Altsybeev, I; Prado, CAG; Andrei, C; Andronic, A; Anguelov, V; Anielski, J; Anticic, T; Antinori, F; Antonioli, P; Aphecetche, L; Appelshauser, H; Arbor, N; Arcelli, S; Armesto, N; Arnaldi, R; Aronsson, T; Arsene, IC; Arslandok, M; Augustinus, A; Averbeck, R; Awes, TC; Azmi, MD
Anul: 
2013
DOI: 
http://dx.doi.org/10.1103/PhysRevLett.111.222301
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