Metal-semiconductor transition in epitaxial ZnO thin films

Publication type: 
Journal
Autori: 
M. Nistor, F. Gherendi, N. B. Mandache, C. Hebert, J. Perrière, and W. Seiler,
Number of authors: 
6
Anul: 
2009

Journal data

Journal: 
Journal of Applied Physics
Vol.: 
106
Pag.: 
103710
ISI factor: 
2.200