The deep level influence on the admittance of AlN/Si structures with pulsed laser deposited AlN films

Publication type: 
Journal
Autori: 
S. Simeonov, A. Szekeres, I. Minkov, S. Grigorescu, G. Socol, C. Ristoscu, I. N. Mihailescu
Number of authors: 
7
Anul: 
2009

Journal data

Journal: 
Journal of Optoelectronics and Advanced Materials
Vol.: 
11(9)
Pag.: 
1292-1295
ISI factor: 
0.577