Annealing temperature dependence of Ohmic contact resistance and morphology on InAlN/GaN high electron mobility transistor structures

Publication type:

Journal

Autori:

Lo, CF; Liu, L; Chang, CY; Ren, F; Craciun, V; Pearton, SJ; Heo, YW; Laboutin, O; Johnson, JW

Anul:

2011

DOI:

http://dx.doi.org/10.1116/1.3545811

Journal data

Journal:

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Vol.:

Pag.:

21002